May 24 (Tue.) 09:00-09:40
Fabrication of AlN Templates with Dislocation Densites of 107cm-2 by High-Temperature AnnealingProf. Hideto Miyake (Mie University, Japan)
Hideto Miyake received his MS degree in 1988 from Osaka University. Since 1988, he works at Mie University, and is currently a professor. He received his Dr. of Eng. Degree in 1994 from Osaka University. He is a Fellow of the Japan Society of Applied Physics (2020).
May 24 (Tue.) 09:40-10:20
Gallium Oxide Materials and Devices for Next Generation UWBG Semiconductor TechnologiesProf. Sriram Krishnamoorthy (University of California, Santa Barbara, USA)
Sriram Krishnamoorthy is a Mehrabian Career Development Chair Assistant professor in the Materials Department at UC Santa Barbara where his group works at the intersection of materials, electrical engineering, and physics to study and engineer next generation (ultra)wide band gap semiconductors such as Gallium Oxide. His group is interested in epitaxial growth, electronic transport, design/modeling, micro/nano fabrication, and characterization of electronic/optoelectronic devices for a wide range of applications such as power electronics, high frequency electronics and ultra-violet optoelectronics. Sriram received his Ph.D. in Electrical Engineering from The Ohio State University, and previously was an Assistant Professor at the University of Utah. Email: sriramkrishnamoorthy@ucsb.edu
May 24 (Tue.) 10:35-11:15
Diamond Semiconductors: Current Status of Single Crystal Growth and Device TechnologiesProf. Okhyun Nam (TU-KOREA, Korea)
Okhyun Nam is a professor in the department of Nano and Semiconductor Engineering at the TU-Korea (Tech University of Korea), South Korea. His teaching and research interests are in the areas of the UWBG (ultra-wide bandgap) semiconductor materials such as AlGaN and diamond and their device growth and fabrications for the electronic and optoelectronic applications in the future. After obtaining a Ph.D. from Yonsei University in South Korea in 1994, Professor Nam has studied the III-nitride semiconductors at the KIST and North Carolina State University as a post-doctoral researcher between 1995 and 1998. Also, he has studied and developed III-Nitride blue laser diodes between 1998 and 2007 at the Samsung Advance Institute of Technology. He has been working at TU-Korea since 2007 and published over 150 SCIE international journals and has 60 patents.
May 24 (Tue.) 11:15-11:55
Boron Nitride: Growth and Optical Properties of its Polytypes, or What Makes Sp2 Hybridization So SpecialProf. Guillaume Cassabois (University of Montpellier, France)
Guillaume Cassabois is a Professor at Montpellier University. He received his PhD at Ecole Normale Superieure-Paris (ENS) in 1999. He was assistant professor in Sorbonne University/ENS, and he has been a Professor working in Laboratoire Charles Coulomb-Montpellier since 2010. He is an expert in the optical spectroscopy of semiconductors.
IWUMD 2022 Secretariat
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