Inside Intel's first product: the 3101 RAM chip held just 64 bits

Intel's first product was not a processor, but a memory chip: the 31011 RAM chip, released in April 1969. This chip held just 64 bits of data (equivalent to 8 letters or 16 digits) and had the steep price tag of 99ドル.50.2 The chip's capacity was way too small to replace core memory, the dominant storage technology at the time, which stored bits in tiny magnetized ferrite cores. However, the 3101 performed at high speed due to its special Schottky transistors, making it useful in minicomputers where CPU registers required fast storage. The overthrow of core memory would require a different technology—MOS DRAM chips—and the 3101 remained in use in the 1980s.3

This article looks inside the 3101 chip and explains how it works. I received two 3101 chips from Evan Wasserman and used a microscope to take photos of the tiny silicon die inside.4 Around the outside of the die, sixteen black bond wires connect pads on the die to the chip's external pins. The die itself consists of silicon circuitry connected by a metal layer on top, which appears golden in the photo. The thick metal lines through the middle of the chip power the chip. The silicon circuitry has a grayish-purple color, but it largely covered by the metal layer. Most of the chip contains a repeated pattern: this is the 16x4 array of storage cells. In the upper left corner of the chip, the digits "3101" in metal identify the chip, but "Intel" is not to be found.

Die photo of the Intel 3101 64-bit RAM chip. Click for a larger image.

Die photo of the Intel 3101 64-bit RAM chip. Click for a larger image.

Overview of the chip

The 3101 chip is controlled through its 16 external pins. To select one of the chip's 16 words of memory, the address in binary is fed into the chip through the four address pins (A0 to A3). Memory is written by providing the 4-bit value on the data input pins (D1 to D4). Four data output pins (O1 to O4) are used to read memory; these pins are inverted as indicated by the overbar. The chip has two control inputs. The chip select pin (CS) enables or disables the chip. The write enable pin (WE) selects between reading or writing the memory. The chip is powered with 5 volts across the Vcc and ground pins.

The diagram below shows how the key components of the 3101 are arranged on the die. The RAM storage cells are arranged as 16 rows of 4 bits. Each row stores a word, with bits D1 and D2 on the left and D3 and D4 on the right. The address decode logic in the middle selects which row of storage is active, based on the address signals coming from the address drivers at the top. At the bottom, the read/write drivers provide the interface between the storage cells and the data in and out pins.

Block diagram of the 3101 RAM chip.

Block diagram of the 3101 RAM chip.

Transistors

Transistors are the key components in a chip. The 3101 uses NPN bipolar transistors, different from the MOS transistors used in modern memory chips. The diagram below shows one of the transistors in the 3101 as it appears on the die. The slightly different tints in the silicon indicate regions that have been doped to form N and P type silicon with different semiconductor properties. The cross-section diagram illustrates the internal structure of the transistor. On top (black) are the metal contacts for the collector (C), emitter (E), and base (B). Underneath, the silicon has been doped to form the N and P regions that make up the transistor.

A key innovation of the 3101 was using Schottky transistors (details), which made the 3101 almost twice as fast as other memory chips.5 In the cross section, note that the base's metal contact touches both the P and N regions. You might think this shorts the two regions together, but instead a Schottky diode is formed where the metal contacts the N layer.6

The structure of an NPN Schottky transistor inside the Intel 3101 chip.

The structure of an NPN Schottky transistor inside the Intel 3101 chip.

The 3101 also used many multiple-emitter transistors. While a multiple-emitter transistors may seem strange, they are common in bipolar integrated circuits, especially TTL logic chips. A multiple-emitter transistor simply has several emitter regions embedded in the base region. The die photo below shows one of these transistors with the collector on the left, followed by the base and two emitters.

A multiple-emitter transistor from the Intel 3101 chip.

A multiple-emitter transistor from the Intel 3101 chip.

Driving the data output pins requires larger, high-current transistors. The image below shows one of these transistors. The central rectangle is the base, surrounded by the C-shaped emitter in the middle and the large collector on the outside. Eight of these high-current transistors are also used to drive the internal address select lines.

For the high-current output, the Intel 3101 chip uses larger transistors.

For the high-current output, the Intel 3101 chip uses larger transistors.

Diodes

While examining the 3101 chip, I was surprised by the large number of diodes on the chip. Eventually I figured out that the chip used DTL (diode-transistor logic) for most of its logic rather than TTL (transistor-transistor logic) that I was expecting. The diagram below shows one of the diodes on the chip. I believe the chip builds diodes using the standard technique of connecting an NPN transistor as a diode.

Presumed structure of a diode inside the 3101 chip. I believe this is a regular diode, not a Schottky diode.

Presumed structure of a diode inside the 3101 chip. I believe this is a regular diode, not a Schottky diode.

Resistors

The die photo below shows several resistors on the 3101 die. The long, narrow snaking regions of p-type silicon provide resistance. Resistors in integrated circuits are inconveniently large, but are heavily used in the 3101 for pull-up and pull-down resistors. At the right is a square resistor, which has low resistance because it is very wide.7 It is used to route a signal under the metal layer, rather than functioning a resistor per se.

Resistors inside the 3101 chip.

Resistors inside the 3101 chip.

The static RAM cell

Now that I've explained the individual components of the chip, I'll explain how the circuitry is wired together for storage. The diagram below shows the cell for one bit of storage with the circuit diagram overlaid. Each cell consists of two multi-emitter transistors (outlined in red) and two resistors (at the top). The horizontal and vertical wiring connects cells together. This circuit forms a static RAM cell, basically a latch that can be in one of two states, storing one data bit.

The circuitry of one storage cell of the 3101 RAM chip. The two multiple-emitter transistors are outlined in red.

The circuitry of one storage cell of the 3101 RAM chip. The two multiple-emitter transistors are outlined in red.

Before explaining how this storage cell works, I'll explain a simpler latch circuit, below. This circuit has two transistors cross-connected so if one transistor is on, it forces the other off. In the diagram, the left transistor is on, which keeps the right transistor off, which keeps the left transistor on. Thus, the circuit will remain in this stable configuration. The opposite state—with the left transistor off and the right transistor on—is also stable. Thus, the latch has two stable configurations, allowing it to hold a 0 or a 1.

A simple latch circuit. The transistor on the left is on, forcing the transistor on the right off, forcing the transistor on the left off...

A simple latch circuit. The transistor on the left is on, forcing the transistor on the right off, forcing the transistor on the left off...

To make this circuit usable—so the bit can be read or modified—more complex transistors with two emitters are used. One emitter is used to select which cell to read or write, while the other emitter is used for the read or write data. This yields the schematic below, which matches the storage cell die photo diagram above.

The RAM cell used in the Intel 3101 is based on multiple-emitter transistors. The row select lines are raised to read/write the row of cells. Each data line accesses a column of cells.

The RAM cell used in the Intel 3101 is based on multiple-emitter transistors. The row select lines are raised to read/write the row of cells. Each data line accesses a column of cells.

Multiple storage cells are combined into a grid to form the memory memory. One word of memory consists of cells in the same row that share select lines. All the cells in a column store the same bit position; their data lines are tied together. (The bias line provides a voltage level to all cells in the memory.8 )

Note that unlike the simplified cell, the circuit above doesn't have an explicit ground connection; to be powered, it requires a low input on either the select or data/bias lines. There are three cases of interest:

  • Unselected: If the negative row select line is low, current flows out through the row select line. The data and bias lines are unaffected by this cell.
  • Read: If the negative row select line is higher than the data and bias lines, current will flow out the data line if the left transistor is on, and out the bias line if the right transistor is on. Thus, the state of the cell can be read by examining the current on the data line.
  • Write: If the negative row select line is higher and the data and bias lines have significantly different voltages, the transistor on the lower side will switch on, forcing the cell into a particular state. This allows a 0 or 1 to be written to the cell.

Thus, by carefully manipulating the voltages on the select lines, data lines and the bias line, one row of memory can be read or written, while the other cells hold their current value without influencing the data line. The storage cell and the associated read/write circuitry are essentially analog circuits rather than digital since the select, data, and bias voltages must be carefully controlled voltages rather than logic levels.

The address decode logic

The address decode circuitry determines which row of memory cells is selected by the address lines.11 The interesting thing about this circuitry is that you can easily see how it works just by looking at the die photo. The address driver circuitry sends the four address signals along with their complements on eight metal traces through the chip. Each storage row has a four-emitter transistor. In each row you can see four black dots, which are the connections between emitters and address lines. A row will be selected if all the emitter inputs are high.9 A dot on an address line (e.g. A0) will "match" a 1, while a dot on the complemented address line (e.g. A0) will match a 0, so each row matches a unique four-bit address. In the die photo below, you can see the decoding logic counting down in binary for rows 15 down to 11;10 the remainder of the circuit follows the same pattern.

The address decode logic in the Intel 3101 RAM chip. Each row decodes matches four address lines to decode one of the 16 address combinations. You can see the value counting down in binary.

The address decode logic in the Intel 3101 RAM chip. Each row decodes matches four address lines to decode one of the 16 address combinations. You can see the value counting down in binary.

Some systems that used the 3101

The 64-bit storage capacity of the 3101 was too small for a system's main memory, but the chip had a role in many minicomputers. For example, the Burroughs D Machine was a military computer (and the source of the chips I examined). It used core memory for its main storage, but a board full of 3101 chips provided high-speed storage for its microcode. The Xerox Alto used four 3101 chips to provide 16 high-speed registers for the CPU, while the main memory used slower DRAM chips. Interdata used 3101 chips in many of its 16- and 32-bit minicomputers up until the 1980s.12

The 3101 was also used in smaller systems. The Diablo 8233 terminal used them as RAM.13 The Datapoint 2200 was a "programmable terminal" that held its processor stack in fast 3101 chips rather than the slow main memory which was built from Intel 1405 shift registers.

The CPU of the Datapoint 2200 computer was built from a board full of TTL chips. The four white chips in the lower center-right are Intel 3101 RAM chips holding the stack. Photo courtesy of Austin Roche (I think).

The CPU of the Datapoint 2200 computer was built from a board full of TTL chips. The four white chips in the lower center-right are Intel 3101 RAM chips holding the stack. Photo courtesy of Austin Roche (I think).

How I created the die photos

To get the die photos, I started with two chips that I received thanks to Evan Wasserman and John Culver. The pins on the chips had been crushed in the mail, but this didn't affect the die photos. The chips had two different lot numbers that indicate they were manufactured a few months apart. Strangely, the metal lids on the chips were different sizes and the dies were slightly different. For more information, see the CPU Shack writeup of the 3101.

Two 3101 RAM chips. The chip on the right was manufactured slightly later and has a larger lid over the die.

Two 3101 RAM chips. The chip on the right was manufactured slightly later and has a larger lid over the die.

Popping the metal lid off the chips was easy—just a tap with a hammer and chisel. This revealed the die inside.

With the lid removed, you can see the die of the 3101 RAM chip and the bond wires connected to the die.

With the lid removed, you can see the die of the 3101 RAM chip and the bond wires connected to the die.