GaN HEMTs

Qorvo offers a broad portfolio of gallium nitride (GaN) discrete transistor products with varying levels of power, voltage and frequency ratings, in both die-level and packaged solutions. Our products provide the high performance of GaN plus the convenience of industry-standard packaging, which speeds design and manufacturing — all backed by our industry-leading reliability.

Key Features

  • High efficiency and power density
  • Superior gain
  • Ruggedness and ability to operate over a wide bandwidth
  • Record-setting reliability that exceeds previous industry standards
  • Design expertise as a frontrunner in GaN technology

Typical Applications

  • Military and civilian radar
  • Professional and military radio communications
  • Test instrumentation
  • Wideband or narrowband amplifiers
  • Jammers
  • Base station – base transceiver station, repeaters, pico cells, macro cell networks

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RF Simulation Models

Our GaN transistor models provide nonlinear simulation accuracy from Modelithics. Learn More >
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Featured Blogs: Model-Based GaN PA Design Basics

Qorvo and Dr. Larry Dunleavy at Modelithics have teamed up to explain how nonlinear models and the Modelithics Qorvo GaN Library can improve your PA designs.

Related Resources

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Modelithics Qorvo GaN Library

The Modelithics® Qorvo GaN Library contains high-accuracy nonlinear simulation models for Qorvo GaN transistor devices.

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Read the latest RF trends, how-to articles, design tips and more from Qorvo experts.

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