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Visual TCAD Journal (WIP)

Documentation of what I learnt in Visual TCAD during my undergraduate years in ECE during IIIrd Semester subject of EC24201 and EC24202 Electronic Devices Theory and Lab respectively.

Software Used: Cogenda Visual TCAD


WHY THIS LAB JOURNAL?

Most lab work ends up as scattered files, half-written observations, and "I’ll understand this later" moments.

My goal was to to avoid exactly that. The fact that I am writing and working on this repository a semester later fulfils its goal!

The goal was simple:

  • Document every experiment properly.
  • Understand why the device behaves the way it does.
  • Build something I can revisit without relearning everything from scratch.

Instead of treating labs as submissions, this journal treats them as building blocks of understanding semiconductor devices.



WHO IS THIS FOR?

  • Primarily for myself, as a structured record of learning.
  • For future me, who will definitely forget details :P.
  • For juniors or anyone exploring TCAD, who might want a cleaner reference of where to start from zero.

If it helps someone avoid confusion or saves time, that’s a win.



FOLDER STRUCTURE

VISUALTCADJOURNAL/
│
├── SiliconDiode/
│ ├── 50-50_diffusion_layer/
│ ├── point_contact_junction/
│ └── README.md
│
├── GermaniumDiode/
│ ├── 50-50_diffusion_layer/
│ ├── point_contact_junction/
│ └── README.md
│
├── transistor/
│ └── README.md
│
├── LICENSE
└── README.md (You are here!)


DEVICES COVERED

1. Silicon Diode

  • 50-50 Equal Diffusion PN Junction.
  • Point Contact Diode.
  • Full comparison between both structures.

2. Germanium Diode (WIP)

  • Currently includes Point Contact Diode (forward bias).
  • More experiments will be added.

3. Transistor (WIP)

  • Will include structure, characteristics, and analysis.


BASIC INSIGHTS (What actually stood out?)

  • Two devices can use the same material and same voltage, yet behave completely differently.
  • Small changes in doping profile or geometry can change current by orders of magnitude.
  • Mesh refinement is not just a step, it directly affects how accurately physics is captured.
  • Forward bias behavior is intuitive, but reverse bias reveals how stable (or unstable) a device really is.

At some point it stops feeling like "simulation" and starts feeling like you’re watching physics unfold. Can you hear the music?



KEY TAKEAWAYS

  • Documentation beats memory every single time, especially when you have a memory of a sloth bear and an attention span of goldfish xD.
  • Understanding always comes from actually comparing, not just simulating.
  • Numbers alone are meaningless unless you question them, why the value occured or was derived.

Also, turns out lab work becomes a lot more interesting when you stop rushing to finish it. I wish I could take this lab once more, it was actually fun!



FUTURE UPDATES

  • Complete Germanium diode analysis (both bias conditions). - COMPLETED!
  • Add Transistor simulations (likely BJT first). - UP NEXT
  • Include deeper comparisons between:
    • Silicon vs Germanium.
    • Diode vs Transistor behavior.
  • Possibly extend into:
    • MOS structures. (Probably, if they don't look scary!)
    • Advanced device simulations.


THANK YOU!

A special thanks to my professor Dr. R.K. Lal who taught this subject back in IIIrd Semester, he introduced & taught us to this software.

If you went through this repository, I hope it made things a bit clearer (or at least less confusing :P).

If this helped you in any way, consider giving it a ⭐.

It’s a small thing, but yeah... it means more than you’d think.

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Documentation of what I learnt in Visual TCAD during my undergraduate years in ECE during IIIrd Semester Subject of EC24201 and EC24202 Electronic Devices Theory and Lab Respectively.

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