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Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

  • Materials for Advanced Semiconductor Memories
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Abstract

Ferroelectrics are promising for nonvolatile memories. However, the difficulty of fabricating ferroelectric layers and integrating them into complementary metal oxide semiconductor (CMOS) devices has hindered rapid scaling. Hafnium oxide is a standard material available in CMOS processes. Ferroelectricity in Si-doped hafnia was first reported in 2011, and this has revived interest in using ferroelectric memories for various applications. Ferroelectric hafnia with matured atomic layer deposition techniques is compatible with three-dimensional capacitors and can solve the scaling limitations in 1-transistor-1-capacitor (1T-1C) ferroelectric random-access memories (FeRAMs). For ferroelectric field-effect-transistors (FeFETs), the low permittivity and high coercive field Ec of hafnia ferroelectrics are beneficial. The much higher Ec of ferroelectric hafnia, however, makes high endurance a challenge. This article summarizes the current status of ferroelectricity in hafnia and explains how major issues of 1T-1C FeRAMs and FeFETs can be solved using this material system.

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Acknowledgements

The authors thank all current and former team members at NaMLab, Fraunhofer IPMS-CNT, Global Foundries, Seoul National University, and all cooperation partners for their dedicated work on ferroelectric hafnium oxide and its applications. Part of this work was supported by the EFRE Fund of the European Commission within the scope of technology development, the Free State of Saxony (Germany), and the German Research Foundation (Deutsche Forschungsge-meinschaft; Project MI 1247/11–2). M.H.P. is supported by a Humboldt Postdoctoral Fellowship from the Alexander von Humboldt Foundation.

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Authors and Affiliations

  1. TU Dresden, Germany

    Thomas Mikolajick

  2. Nanoelectronic Materials Laboratory GmbH, Germany

    Thomas Mikolajick

  3. Nanoelectronic Materials Laboratory gGmbH, Germany

    Stefan Slesazeck, Min Hyuk Park & Uwe Schroeder

Authors
  1. Thomas Mikolajick
  2. Stefan Slesazeck
  3. Min Hyuk Park
  4. Uwe Schroeder

Corresponding author

Correspondence to Thomas Mikolajick.

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Mikolajick, T., Slesazeck, S., Park, M.H. et al. Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors. MRS Bulletin 43, 340–346 (2018). https://doi.org/10.1557/mrs.2018.92

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