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The whole AGC amplifier is designed and fabricated in 0.13 [micro]m SiGe HBT BiCMOS technology with an [f.sub.T] of 200-GHz and [f.sub.MAX] of 250GHz.
Cauwenberghs, "A translinear SiGe BiCMOS current-controlled oscillator with 80 Hz-800 MHz tuning range", Analog 1ntegrated Circuits and Signal Processing, vol.
Winkler, "Integrated 22 GHz low-phase-noise VCO with digital tuning in SiGe BiCMOS technology," Electronic Lett., Vol.
The MB15H156 RF front-end chip is built using Fujitsu's BiCMOS process, which integrates most RF-externals, and features on-chip IF-filters, VCO, PLL, oscillators and LNA.
Atmel is also a provider of system-level integration semiconductor solutions using CMOS, BiCMOS, SiGe, and high-voltage BCDMOS process technologies.
Atmel is also a leading provider of system-level integration semiconductor solutions using CMOS, BiCMOS, SiGe, and high-voltage BCDMOS process technologies.
The advantage of this design is that it is a proven architecture having been successfully implemented in a number of earlier technologies, including slower speed 1.06/1.25GHz devices utilizing 0.25m m (micron) and 0.35m m CMOS and 0.8m m BiCMOS processes.
has an agreement with IBM entitling AMCC to advanced access and use of IBM's current and future generations of silicon-germanium BiCMOS processes and libraries.
More recently, BiCMOS has been presented as the optimum combination of the high-speed capability of ECL and the high-complexity capability of CMOS.
Active development is proceeding in this area, under the generic name BiCMOS. BiCMOS is also of interest for analogue integrated circuits.
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