Simon Sze
From Wikipedia, the free encyclopedia
(Redirected from Simon Min Sze)
Taiwanese-American electrical engineer (1936–2023)
You can help expand this article with text translated from the corresponding article in Chinese. (December 2020) Click [show] for important translation instructions.
- Machine translation, like DeepL or Google Translate, is a useful starting point for translations, but translators must revise errors as necessary and confirm that the translation is accurate, rather than simply copy-pasting machine-translated text into the English Wikipedia.
- Do not translate text that appears unreliable or low-quality. If possible, verify the text with references provided in the foreign-language article.
- You must provide copyright attribution in the edit summary accompanying your translation by providing an interlanguage link to the source of your translation. A model attribution edit summary is
Content in this edit is translated from the existing Chinese Wikipedia article at [[:zh:施敏]]; see its history for attribution. - You may also add the template
{{Translated|zh|施敏}}to the talk page. - For more guidance, see Wikipedia:Translation.
Simon Sze | |
|---|---|
| 施敏 | |
| Born | (1936年03月21日)21 March 1936 |
| Died | 6 November 2023(2023年11月06日) (aged 87) |
| Citizenship | Taiwan United States |
| Alma mater | National Taiwan University (BS) University of Washington (MS) Stanford University (PhD) |
| Known for | Floating-gate MOSFET |
| Awards | J. J. Ebers Award (1991) IEEE Celebrated Member (2017) Future Science Prize (2021) |
| Scientific career | |
| Fields | Electronic engineering |
| Institutions | National Yang Ming Chiao Tung University |
Simon Min Sze, or Shi Min (Chinese: 施敏; pinyin: Shī Mǐn; 21 March 1936 – 6 November 2023), was a Taiwanese-American electrical engineer. He is best known for inventing the floating-gate MOSFET with Korean electrical engineer Dawon Kahng in 1967.
Early life and education
[edit ]Simon Min Sze was born in Nanjing, Jiangsu, and grew up in Taiwan. After graduating from the National Taiwan University in 1957, he received a master's degree from the University of Washington in 1960 and a doctorate from Stanford University in 1963.
Career and research
[edit ]Sze worked for Bell Labs until 1990, after which he returned to Taiwan and joined the faculty of National Chiao Tung University.[1] He is well known for his work in semiconductor physics and technology, including his 1967 invention (with Dawon Kahng) of the floating-gate transistor,[2] now widely used in non-volatile semiconductor memory devices. He wrote and edited many books, including Physics of Semiconductor Devices, one of the most-cited texts in its field.
Death
[edit ]Simon Sze died on 6 November 2023, at the age of 87.[3]
Recognition
[edit ]- 1977: IEEE Fellow [4]
- 1991: J. J. Ebers Award [5]
- 1994: Academician of Academia Sinica, Taiwan[6]
- 1995: Member of National Academy of Engineering, United States[7]
- 1998: Foreign Member of Chinese Academy of Engineering, China
- 2010: Tenured Chair Professor, National Chiao Tung University, Taiwan
- 2014: Honorary Chair Professor, National Taiwan University of Science and Technology, Taiwan
- 2017: IEEE Celebrated Member
- 2021: The Future Science Prize, China[8]
- 2022: Asian Scientist 100, Asian Scientist [9]
Bibliography
[edit ]- Physics of Semiconductor Devices, S. M. Sze. New York: Wiley, 1969, ISBN 0-471-84290-7; 2nd ed., 1981, ISBN 0-471-05661-8; 3rd ed., with Kwok K. Ng, 2006, ISBN 0-471-14323-5.
- Nonvolatile Memories: Materials, Devices and Applications 2-volume set, Tseung-Yuen Tseng and Simon M. Sze. Los Angeles: American Scientific Publishers, 2012; ISBN 1-58883-250-3.
- Semiconductor Devices: Physics and Technology, S. M. Sze. New York: Wiley, 1985; 2nd ed., 2001, ISBN 0-471-33372-7; 3rd ed., 2012, ISBN 978-0470-53794-7.
- VLSI Technology, ed. S. M. Sze. New York: McGraw-Hill, 1983, ISBN 0-07-062686-3; 2nd ed., 1988, ISBN 0-07-062735-5.
- Modern Semiconductor Device Physics, ed. S. M. Sze. New York: John Wiley & Sons, Inc., 1998, ISBN 0-471-15237-4.
References
[edit ]- ^ "In memory of Academician Simon M. Sze". National Yang Ming Chiao Tung University. 14 November 2023. Retrieved 19 December 2023.
- ^ D. Kahng and S. M. Sze, A floating-gate and its application to memory devices, The Bell System Technical Journal, 46, #4 (1967), pp. 1288–1295.
- ^ "Simon Sze Obituary (1936–2023) - Walnut Creek, CA - San Francisco Chronicle". Legacy.com. Retrieved 8 November 2023.
- ^ Tsai, Yi-Chia; Magyari-Köpe, Blanka; Li, Yiming; Samukawa, Seiji; Nishi, Yoshio; Sze, Simon M. (2019). "Contact Engineering of Trilayer Black Phosphorus With Scandium and Gold". IEEE Journal of the Electron Devices Society. 7: 322–328. doi:10.1109/JEDS.2019.2897167 .
- ^ Electron Devices Society J.J. Ebers Award , web page at the IEEE, accessed 11-I-2007.
- ^ "Simon M. Sze". Academia Sinica. Retrieved 19 December 2023.
- ^ "Dr. Simon M. Sze". United States National Academy of Engineering. Retrieved 19 December 2023.
- ^ Dr. Simon Min Sze wins the Future Science Prize
- ^ "The Asian Scientist 100". Asian Scientist . Retrieved 13 March 2025.
Categories:
- 1936 births
- 2023 deaths
- American electrical engineers
- American people of Taiwanese descent
- National Taiwan University alumni
- Scientists at Bell Labs
- American people of Chinese descent
- Members of the United States National Academy of Engineering
- 20th-century Chinese inventors
- Engineers from Jiangsu
- Taiwanese people from Jiangsu
- Scientists from Nanjing
- University of Washington alumni
- Stanford University alumni
- Academic staff of the National Chiao Tung University
- Foreign members of the Chinese Academy of Engineering
- Members of Academia Sinica
- Fellows of the IEEE