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DescriptionBJT h-parameters (generalised).svg

Generalised h-parameter model of an NPN BJT. The term "x" in the model represents a different BJT lead depending on the topology used. For common-emitter mode the various symbols take on the specific values as:

  • x = 'e' because it is a common-emitter topology
  • Terminal 1 = Base
  • Terminal 2 = Collector
  • Terminal 3 = Emitter
  • iin = Base current (ib)
  • io = Collector current (ic)
  • Vin = Base-to-emitter voltage (VBE)
  • Vo = Collector-to-emitter voltage (VCE)

and the h-parameters are given by –

  • hix = hie – The input impedance of the transistor (corresponding to the emitter resistance re).
  • hrx = hre – Represents the dependence of the transistor's IBVBE curve on the value of VCE. It is usually very small and is often neglected (assumed to be zero).
  • hfx = hfe – The current-gain of the transistor. This parameter is often specified as hFE or the DC current-gain (βDC) in datasheets.
  • hox = hoe – The output impedance of transistor. This term is usually specified as an admittance and has to be inverted to convert it to an impedance.
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H-parameters explanation for a Bipolar Junction Transistor model

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Date/TimeThumbnailDimensionsUserComment
current06:55, 4 August 2010 Thumbnail for version as of 06:55, 4 August 2010 300 ×ばつ 175 (41 KB)Inductiveload fix label (i_in -> i_i)
06:51, 4 August 2010 Thumbnail for version as of 06:51, 4 August 2010 300 ×ばつ 175 (41 KB)Inductiveload fix fuzzy line
06:50, 4 August 2010 Thumbnail for version as of 06:50, 4 August 2010 300 ×ばつ 175 (41 KB)Inductiveload {{Information |Description=Generalised h-parameter model of an NPN BJT. The term ''"x"'' in the model represents a different BJT lead depending on the topology used. For common-emitter mode the various symbols take on the specific values as: *''x'' = 'e'

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