Compound semiconductors 1998 : proceedings of the Twenty-fifth International Symposium on Compound Semiconductors held in Nara, Japan, 12-16 October 1998

Bibliographic Information

Compound semiconductors 1998 : proceedings of the Twenty-fifth International Symposium on Compound Semiconductors held in Nara, Japan, 12-16 October 1998

edited by H Sakaki, J-C Woo, N Yokoyama and Y Hirayama

(Institute of Physics conference series, no. 162)

Institute of Physics Pub., c1999

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Includes bibliographical references and index

Description and Table of Contents

Description

Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.

Table of Contents

Review papers (3 papers). Optoelectronic devices and OEICs (10 papers). Long-wavelength and intersubband transition (7 papers). Optical properties (7 papers). Field-effect transistors: FETs and HEMTs (16 papers). Hetero-bipolar transistors: HBTs (6 papers). Semiconductor device physics (12 papers). Quantum wires (6 papers). Quantum dots (13 papers). Material growth (12 papers). Material characterization (12 papers). Material growth and characterization: wide gap and nitride (17 papers). Doping and processing (13 papers). Late news (11 papers). Author and subject index.

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