Microscopy of semiconducting materials 1997 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 7-10 April 1997

書誌事項

Microscopy of semiconducting materials 1997 : proceedings of the Royal Microscopical Society Conference held at Oxford University, 7-10 April 1997

by A.G. Cullis and J.L. Hutchison

(Institute of Physics conference series, no. 157)

Institute of Physics, 1997

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注記

Includes bibliographical references and index

内容説明・目次

内容説明

This tenth volume in the series provides an overview of recent developments and current research activity including both invited review and summary research papers. Particular importance is attached at this meeting to papers addressing the centenary of the discovery of the electron. "MSM" has become the premier forum for dissemination of research results in this well established field, which is of continuing importance for the analysis of both reliable substrate materials, and as-grown devices in the whole range of semiconducting materials. It covers developments in analysis techniques across the whole range of microscopies. Also includes specimen preparation techniques.

目次

Preface. Electron centenary symposium (W F Brinkman: The materials basis behind the telecommunications revolution. T Matsuo: The evolution of electron beam lithography and metrology for semiconductor technologies.) High resolution microscopy and nanoscale analysis (11 papers). Dislocations and boundaries (6 papers). Epitaxial layers: defect behaviour and strain relief (12 papers). Epitaxial layers: wide band-gap nitrides (14 papers). Epitaxial layers: general growth phenomena (19 papers). Self-organised and quantum domain structures (14 papers). Processed silicon, diamond and specimen preparation methods (21 papers). Silicides and contacts (7 papers). Bulk compounds (4 papers). Electronic devices (13 papers). Scanning probe microscopy (6 papers). Advanced scanning electron and optical microscopy (16 papers). Author and subject indexes.

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