New developments in semiconductor physics : proceedings of the International Summer School, held in Szeged, Hungary, July 1-6, 1979

Bibliographic Information

New developments in semiconductor physics : proceedings of the International Summer School, held in Szeged, Hungary, July 1-6, 1979

edited by F. Beleznay, G. Ferenczi, and J. Giber

(Lecture notes in physics, v. 122)

Springer-Verlag, 1980

  • : gw
  • : us

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Note

Includes bibliographical references and index

Description and Table of Contents

Table of Contents

Low temperature photo- and magneto-transport involving impurity-phonon resonances in semiconductors.- Optically detected magnetic resonance studies of semiconductors.- Deep level spectroscopy in semicounductors by optical excitation.- Depleted layer spectroscopy.- Luminescence of chromium in gallium arsenide.- Analysis of defect states by transient capacitance methods in proton bombarded gallium arsenide at 300 K and 77 K.- Properties of an extended defect in GaAs.62P.38.- Large defect-lattice relaxation phenomena in solids.- Temperature dependent decay of a metastable state of systems with large impurity-lattice relaxation (CdF2 : In).- Electron-phonon interaction: Polaron transport.- Stress dependence of quantum limit hall effect and transverse magnetoresistance in n-InSb.- Photoluminescence in amorphous semiconductors.- Man-made semiconductor superlattices.- The localized states of interfaces and their physical models.- Cyclic cluster model (CCM) in the CNDO approximation for deep levels in covalent solids.- Is there a minimum linewidth in integrated circuits?.

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Details

  • NCID
    BA07318872
  • ISBN
    • 3540099883
    • 0387099883
  • LCCN
    80016227
  • Country Code
    gw
  • Title Language Code
    eng
  • Text Language Code
    eng
  • Place of Publication
    Berlin ; New York
  • Pages/Volumes
    276 p.
  • Size
    25 cm
  • Classification
  • Subject Headings
  • Parent Bibliography ID
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